dat a sheet product s pecification october 1998 discrete semiconductors byw29ex series rectifier diodes ultrafast, rugged
nxp semiconductors product specification rectifier diodes byw29ex series ultrafast, rugged general description quick reference data glass passivated epitaxial rectifier symbol parameter max. max. unit diodes in a full pack plastic envelope, featuring low forward voltage drop, byw29ex- 150 200 ultra-fast recovery times, soft recovery v rrm repetitive peak reverse 150 200 v characteristic and guaranteed reverse voltage surge and esd capability. they are v f forward voltage 0.895 0.895 v intended for use in switched mode power i f(av) forward current 8 8 a supplies and high frequency circuits in t rr reverse recovery time 25 25 ns general where low conduction and i rrm repetitive peak reverse 0.2 0.2 a switching losses are essential. current pinning - sod113 pin configuration symbol pin description 1 cathode 2 anode case isolated limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -150 -200 v rrm repetitive peak reverse voltage - 150 200 v v rwm crest working reverse voltage - 150 200 v v r continuous reverse voltage - 150 200 v i f(av) average forward current 1 square wave; = 0.5; t hs 106 ?c - 8 a sinusoidal; a = 1.57; t hs 109 ?c - 7.3 a i f(rms) rms forward current - 11.3 a i frm repetitive peak forward current t = 25 s; = 0.5; - 16 a t hs 106 ?c i fsm non-repetitive peak forward t = 10 ms - 80 a current t = 8.3 ms - 88 a sinusoidal; with reapplied v rwm(max) i 2 ti 2 t for fusing t = 10 ms - 32 a 2 s i rrm repetitive peak reverse current t p = 2 s; = 0.001 - 0.2 a i rsm non-repetitive peak reverse t p = 100 s - 0.2 a current t stg storage temperature -40 150 ?c t j operating junction temperature - 150 ?c 12 case k a 12 1 neglecting switching and reverse current losses october 1998 1 rev 1.200
nxp semiconductors product specification rectifier diodes byw29ex series ultrafast, rugged esd limiting value symbol parameter conditions min. max. unit v c electrostatic discharge human body model; - 8 kv capacitor voltage c = 250 pf; r = 1.5 k isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol r.m.s. isolation voltage from f = 50-60 hz; sinusoidal - 2500 v both terminals to external waveform; heatsink r.h. 65% ; clean and dustfree c isol capacitance from both terminals f = 1 mhz - 10 - pf to external heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th j-hs thermal resistance junction to with heatsink compound - - 5.5 k/w heatsink without heatsink compound - - 7.2 k/w r th j-a thermal resistance junction to in free air - 55 - k/w ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit v f forward voltage i f = 8 a; t j = 150?c - 0.80 0.895 v i f = 8 a - 0.92 1.05 v i f = 20 a - 1.1 1.3 v i r reverse current v r = v rwm ; t j = 100 ?c - 0.2 0.6 ma v r = v rwm -210 a dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit q s reverse recovery charge i f = 2 a; v r 30 v; -di f /dt = 20 a/ s- 4 11 nc t rr1 reverse recovery time i f = 1 a; v r 30 v; - 20 25 ns -di f /dt = 100 a/s t rr2 reverse recovery time i f = 0.5 a to i r = 1 a; i rec = 0.25 a - 15 20 ns v fr forward recovery voltage i f = 1 a; di f /dt = 10 a/ s-1-v october 1998 2 rev 1.200
nxp semiconductors product specification rectifier diodes byw29ex series ultrafast, rugged fig.1. definition of t rr1 , q s and i rrm fig.2. definition of v fr fig.3. circuit schematic for t rr2 fig.4. definition of t rr2 fig.5. maximum forward dissipation p f = f(i f(av) ); square current waveform where i f(av) =i f(rms) x d. fig.6. maximum forward dissipation p f = f(i f(av) ); sinusoidal current waveform where a = form factor = i f(rms) / i f(av) . q s 100% 10% time di dt f i r i f i rrm t rr i = 1a r rec i = 0.25a 0a trr2 0.5a if ir time time v f v fr v f i f 024681012 0 2 4 6 8 10 12 d = 1.0 0.5 0.2 0.1 byw29 if(av) / a pf / w d = t p t p t t t i ths(max) / c 150 139 128 117 106 95 84 vo = 0.791 v rs = 0.013 ohms shunt current to scope d.u.t. voltage pulse source r 012345678 0 1 2 3 4 5 6 7 8 a = 1.57 1.9 2.2 2.8 4 byw29 if(av) / a pf / w ths(max) / c 150 144.5 139 133.5 128 122.5 117 111.5 106 vo = 0.791 v rs = 0.013 ohms october 1998 3 rev 1.200
nxp semiconductors product specification rectifier diodes byw29ex series ultrafast, rugged fig.7. maximum t rr at t j = 25 ?c. fig.8. maximum i rrm at t j = 25 ?c. fig.9. typical and maximum forward characteristic i f = f(v f ); parameter t j fig.10. maximum q s at t j = 25 ?c. fig.11. transient thermal impedance; z th j-hs = f(t p ). 1 10 trr / ns 1 10 100 1000 100 dif/dt (a/us) if=1a if=10a 10 1.0 1.0 10 100 -dif/dt (a/us) qs / nc if=10a 5a 2a 1a 100 10 1 0.1 0.01 irrm / a 1 10 100 -dif/dt (a/us) if=1a if=10a 1us 10us 100us 1ms 10ms 100ms 1s 10s 0.001 0.01 0.1 1 10 byw29f/ex pulse width, tp (s) transient thermal impedance, zth j-hs (k/w) d = t p t p t t p t d 0 1 2 30 20 10 0 typ max if / a 0.5 1.5 vf / v tj=150 c tj=25 c byw29 october 1998 4 rev 1.200
nxp semiconductors product specification rectifier diodes byw29ex series ultrafast, rugged mechanical data dimensions in mm net mass: 2 g fig.12. sod113; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.3 max 3.2 3.0 4.6 max 2.9 max 2.8 seating plane 6.4 15.8 max 0.6 2.5 2.54 5.08 12 3 max. not tinned 3 0.5 2.5 0.9 0.7 m 0.4 15.8 max. 19 max. 13.5 min. recesses (2x) 2.5 0.8 max. depth 1.0 (2x) october 1998 5 rev 1.200
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